3n60 1 / 8 may,2015-rev.00 www.dyelec.com 1. gate 2. drain 3. source pin definition: product summary v ds (v) r ds(on) ( ?) current 600 3.6 @ v gs =10v 3a 600v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) rds(on) < 3.6?@ vgs = 10v, id =1.5a fast switching capability lead free in compliance with eu rohs directive. improved dv/dt capability, high ruggedness ordering information case: to-251,to-252,to-220,ito-220 to-262,to-263 package parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 3.0 a continuous drain current i d 3.0 a pulsed drain current (note 2) i dm 12 a avalanche energy singl e puls ed ( note 3) e as 200 mj power dissipation to-220/to-262/to-263 p d 75 w ito-220 34 w to-251/to-252 50 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by tj. 3. l = 44.4mh, ias=3a, vdd=50v, rg=25 ?, starting tj = 25c part no. package packing dmp3n60-tu to-251 75pcs / tube dmd3n60-tr to-252 2.5kpcs / 13 reel dmt3n60-tu to-220 50pcs / tube dmf3n60-tu ito-220 50pcs / tube dmd3n60-tu to-252 75pcs / tube block diagram d g s DMG3N60-TU to-263 50pcs / tube DMG3N60-TU to-263 800pcs / 13" reel dmk3n60-tu to-262 50 pcs / tube
2 / 8 thermal data 3n60 600v n-channel power mosfet electrical characteristics (t c =25c, unless otherwise specified) parameter symbol rating unit junction to ambient to-220/ito-220 to-262/to-263 ja 62.5 c/w to-251/ to-252 110 junction to case to-220/to-262/to-263 jc 1.70 c/w ito-220 3.70 to-251/ to-252 2.6 parameter symbol t est conditions typmin max unit off characteristics drain-source breakdown voltage bv dss gs v = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 10 a gate-source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reversee -100 na on characteristics gate threshold voltage v gs ( th ) ds v = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) 3.6 ? dynamic characteristics input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz pf output capacitance c oss pf reverse transfer capacitance c rss pf switching characteristics turn-on delay time t d( on ) 35 50 ns turn-on rise time t r ns 60 70 turn-off delay time t d( off ) ns 100 150 turn-off fall time t f 75 ns total gate charge q g 18.5 23 nc gate-source charge q gs nc 5.2 gate-drain charge q gd nc 4.9 source- drain diode ratings and characteristics drain-source diode forward voltage v sd 1.4 v maximum continuous drain-source diode forward current i s 3.0 a maximum pulsed drain-source diode forward current i sm 12 a reverse recovery time t rr v gs = 0 v, i s = 3a, di f /dt = 100 a/s ( note 1) 210 ns reverse recovery charge q rr c 1.2 notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2.. essentially independent of operating temperature may,2015-rev.00 www.dyelec.com v gs = -30v, v ds = 0v 350 50 5.5 450 65 7.5 v dd = 30v, i d =0.5a, r g =25? (note 1, 2) 65 - v gs =10 v, i d =1.5a v ds =50v, i d =1.3 a, i g =100a v gs =10v (note 1, 2) - gs v =0 v, i s =3.0a
3 / 8 typical characteristics 3n60 600v n-channel power mosfet may,2015-rev.00 www.dyelec.com 0 0 drain-source on-resistance, r ds(on) (? ) drain current, i d (a) 24 1 2 4 5 6 on-resistance variation vs. drain current and gate voltage 3 6 8 10 12 1 0.1 0.2 source-drain voltage, v sd (v) reverse drain current, i dr (a) on state current vs. allowable case temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 note:: j =25 notes: 1. v gs =0v 2. 250s test v gs =20v v gs =10v
4 / 8 3n60 600v n-channel power mosfet may,2015-rev.00 www.dyelec.com typic al characteristics drain-source breakdown voltage, bv dss (normalized) drain-source on-resistance, r ds(on) (normalized) square wave pulse duration, t 1 (sec) transient thermal response curve case temperature, t c (c) 75 100 0 125 5025 1.0 1.5 2.0 2.5 3.0 maximum drain current vs. case temperature 0.5 150 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 notes: 1. jc (t) = 1.18 /w max. 2. duty factor, d=t1/t2 3. t jm -t c =p dm jc (t) d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 10 0 10 -1 10 -2 drain-source voltage, v ds (v) 10 2 10 1 10 0 10 3 safe operating area ? 600v notes: 1. t j =25 2. t j =150 3. single pulse dc 10ms 1ms 100s operation in this area is limited by r ds(on) 10 1 600
5 / 8 t o - 220 mechanical drawing it o-220 m echanical drawing 3n60 600v n-channel power mosfet may,2015-rev.00 www.dyelec.com
3n60 6 00v n-channel power mosfet 6 / 8 may ,2015-rev.00 www.dyelec.com to-2 62 mechanical drawing to-263 mechanical drawing
7 / 8 to-251 mechanical drawing to-252 mechanical drawing 3n60 600v n-channel power mosfet may,2015-rev.00 www.dyelec.com
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